Semiconductor measurement technology
This quarterly progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period include (1) completion of Hall effect measurements to determine activation energies of the gold donor and acceptor levels in silicon; (2) successful direct measurement of fast interface state density with the circular CCD test structure; and (3) demonstration of the feasibility of the use of acoustic emission as a non-destructive means for testing individual beam-lead bonds.TSP Method Switcha#39; ReJC deg C/W a#39;EB(l+2) a#39;ebi a#39;CBI 0.9 0.5 0.5 1 .1 1.3 1.6 a See circuit diagram, figure 27. be satisfied following ... Because there are no bias resistors, this low current measurement cannot be made on device types a and b.
| Title | : | Semiconductor measurement technology |
| Author | : | W. Murray Bullis, United States. National Bureau of Standards, United States. Defense Nuclear Agency, United States. Defense Advanced Research Projects Agency, United States. Navy Strategic Systems Projects Office |
| Publisher | : | - 1975 |
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